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This article shows that irradiation with neutrons can be used as solution to harden commercial (COTS: Commercial‐Off‐The‐Shelf) n‐channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices against destructive events induced by heavy ion irradiation. Atomic displacements created in silicon, by neutron irradiations, result in traps and recombination centers which reduce the electron‐hole pairs density generated by the heavy ion within the device. These results highlight a strong reduction in the photo‐current generated by the heavy ion, correlated with a reduction of the carrier lifetime.

The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.

The MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.

The temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.

The paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.